inchange semiconductor isc product specification isc silicon npn darlington power transistor 2SD1826 description high dc current gain- : h fe = 2000(min)@ (v ce = 2v, i c = 3.5a) large current capability and wide aso. complement to type 2sb1224 applications designed for use in control of motor drivers, printer hammer drivers, relay drivers,and constant-voltage regulators. absolute maximum ratings(t a =25 ) symbol parameter value unit v cbo collector-base voltage 70 v v ceo collector-emitter voltage 60 v v ebo emitter-base voltage 6 v i c collector current-continuous 7 a i cm collector current-peak 10 a collector power dissipation @t a =25 2 p c collector power dissipation @t c =25 25 w t j junction temperature 150 t stg storage temperature -55~150 isc website www.iscsemi.cn
inchange semiconductor isc product specification isc silicon npn darlington power transistor 2SD1826 electrical characteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit v (br)ceo collector-emitter breakdown voltage i c = 50ma; r be = 60 v v (br)cbo collector-base breakdown voltage i c = 5ma; i e = 0 70 v v ce (sat) collector-emitter saturation voltage i c = 3.5a; i b = 7ma 1.5 v v be (sat) base-emitter saturation voltage i c = 3.5a; i b = 7ma 2.0 v a i cbo collector cutoff current v cb = 40v; i e = 0 100 i ebo emitter cutoff current v eb = 5v; i c = 0 3.0 ma h fe dc current gain i c = 3.5a; v ce = 2v 2000 f t current-gain?bandwidth product i c = 3.5a; v ce = 5v 20 mhz switching times s t on turn-on time 0.6 s t stg storage time 3.0 t f fall time i c = 3a, i b1 = -i b2 = 6ma, v cc = 20v; r l = 6.7 1.7 s isc website www.iscsemi.cn 2
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